Compared to the previous approach Vu et al. Rev.The present study develops a general framework for weak antilocalization (WAL) in a three-dimensional (3D) system, which can be applied for a consistent description of longitudinal resistivity ρ xx B and Hall resistivity ρ xy B over a wide temperature ( T) range. Islam, S., Bhattacharyya, S., Nhalil, H., Banerjee, M., Richardella, A., Kandala, A., Sen, D., Samarth, N., Elizabeth, S., Ghosh, A.: Phys. Shrestha, K., Chou, M., Graf, D., Yang, H.D., Lorenz, B., Chu, C.W.: Phys. Matsuo, S., Koyama, T., Shimamura, K., Arakawa, T., Nishihara, Y., Chiba, D., Kobayashi, K., Ono, T., Chang, C.Z., He, K., Ma, X.C., Xue, Q.K.: Phys. Aronov, “Electron-electron interaction in disordered systems” (North-Holland, 1985) Jash, A., Ghosh, S., Bharathi, A., Banerjee, S.S.: Phys. Kumar, Y., Sultana, R., Sharma, P., Awana, V.P.S., App, S.N.: Sci. Kumar, Y., Sultana, R., Awana, V.P.S.: Physica B: Phys. Shirasawa, T., Sugiki, M., Hirahara, T., Aitani, M., Shirai, T., Hasegawa, S., Takahashi, T.: Phys. Yu, X., He, L., Lang, M., Jiang, W., Xiu, F., Liao, Z., Wang, Y., Kou, X., Zhang, P., Tang, J., Huang, G., Zou, J., Wang, K.L.: Nanotech. Steinberg, H., Laloe, J.B., Fatemi, V., Moodera, J.S., Herrero, P.J.: Phys. Kim, Y.S., Brahlek, M., Bansal, N., Edrey, E., Kapilevich, G.A., Iida, K., Tanimura, M., Horibe, Y., Cheong, S.W., Oh, S.: Phys. Malinowski, A., Bezusyy, V.L., Nowicki, P.: Phys. Ziman, Electrons and Phonons (Oxford University Press, 1960) Sultana, R., Gurjar, G., Gahtori, B., Patnaik, S., Awana, V.P.S.: Mater. Gopal, R.K., Singh, S., Sarkar, J., Mitra, C.: AIP Adv. Hikami, S., Larkin, A.I., Nagaoka, Y.: Prog. Shrestha, K., Graf, D., Marinova, V., Lorenz, B., Chu, C.W.: Jour. Gopal, R.K., Singh, S., Mandal, A., Sarkar, J., Mitra, C.: Sci. Nakamura, F., Kousa, Y., Taskin, A.A., Takeichi, Y., Nishide, A., Kakizaki, A., D’Angelo, M., Lefevre, P., Bertran, F., Ibrahimi, A.T., Komori, F., Kimura, S.I., Kondo, H., Ando, Y., Matsuda, I.: Phys. Šmejkal, L., Mokrousov, Y., Yan, B., MacDonald, A.H.: Nat. Sharma, P., Sharma, M.M., Kumar, M., Awana, V.P.S.: Solid State Commun. Sharma, P., Kumar, M., Awana, V.P.S.: Appl. Sharma, M.M., Kumar, K., Sang, L., Wang, X.L., Awana, V.P.S.: J. Xu, Y., Miotkowski, I., Liu, C., Tian, J., Nam, H., Alidoust, N., Hu, J., Shih, C.K., Hasan, M.Z., Chen, Y.P.: Nat. Yoshimi, R., Yasuda, K., Tsukazaki, A., Takahashi, K.S., Nagaosa, N., Kawasaki, M., Tokura, Y.: Nat. This article gives a clear sign of WAL at low fields and non-saturating linear magneto-resistance (LMR) at higher fields in Bi 0.95Sb 0.05 single crystal, which are governed by multi-scattering mechanism. Coming to the phase coherence dependence on temperature, the de-phasing mechanism in Bi 0.95Sb 0.05 single crystal is found to be governed by both electron-electron scattering and electron-phonon scattering. A field-dependent quadratic (quantum scattering term) and linear (bulk contribution) terms are added to HLN to study the effect of temperature and applied magnetic field on conduction mechanism. The obtained pre-factor (α) value indicated contributions from more than one conduction channel in magneto-conductivity in low field regime. The physical parameters characterizing the WAL effect are calculated using the Hikami-Larkin-Nagaoka (HLN) model. Interestingly, signatures of weak anti-localization (WAL) effect are seen near-zero fields. The magneto-transport studies of Bi 0.95Sb 0.05 single crystal at 2 K temperature show a huge magneto-resistance (MR) ≈ 1300% in a magnetic field of 6 T. The phase is confirmed through powder X-ray diffraction. Here, we report the growth and magneto-transport studies of Bi 0.95Sb 0.05 single crystal synthesized by the self-flux method.
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